-
1 intrinsic mobility
власна рухливістьEnglish-Ukrainian dictionary of microelectronics > intrinsic mobility
-
2 mobility
рухливість - carrier mobility
- diffusion mobility
- drift mobility
- electron mobility
- Hall mobility
- hole mobility
- impurity mobility
- intrinsic mobility
- vacancy mobility -
3 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer -
4 semiconductor
1) напівпровідник 2) напівпровідниковий прилад - amorphous semiconductor
- bare semiconductor
- boron semiconductor
- broad-area semiconductor
- bulk semiconductor
- compensated semiconductor
- compound semiconductor
- cubic semiconductor
- degenerate semiconductor
- direct-gap semiconductor
- discrete semiconductor
- donor-type semiconductor
- double-heterojunction semiconductor
- electronic semiconductor
- elemental semiconductor
- extrinsic semiconductor
- fused semiconductor
- graded-gap semiconductor
- group III-V semiconductor
- high-mobility semiconductor
- high-ohmic semiconductor
- hole semiconductor
- impurity semiconductor
- indirect-gap semiconductor
- intrinsic semiconductor
- large-gap semiconductor
- leadless semiconductor
- low-bandgap semiconductor
- low-mobility semiconductor
- low-ohmic semiconductor
- low-resistance semiconductor
- microwave semiconductor
- narrow-bandgap semiconductor
- neutron transmutation doped semiconductor
- neutron doped semiconductor
- nondegenerate semiconductor
- n-type semiconductor
- optoelectronic semiconductor
- organo-metallic semiconductor
- power semiconductor
- p-type semiconductor
- resin-mold semiconductor
- small-gap semiconductor
- stoichiometric semiconductor
- substrate semiconductor
- synthetic semiconductor
- two-valley semiconductor
- wide-bandgap semiconductor
- zink-blende semiconductor
- II-VI compound semiconductorEnglish-Ukrainian dictionary of microelectronics > semiconductor
См. также в других словарях:
intrinsic mobility — savojo laidumo puslaidininkio krūvininkų judris statusas T sritis radioelektronika atitikmenys: angl. intrinsic mobility vok. Eigenbeweglichkeit, f rus. подвижность носителей в собственном полупроводнике, f pranc. mobilité intrinsèque, f … Radioelektronikos terminų žodynas
Eigenbeweglichkeit — savojo laidumo puslaidininkio krūvininkų judris statusas T sritis radioelektronika atitikmenys: angl. intrinsic mobility vok. Eigenbeweglichkeit, f rus. подвижность носителей в собственном полупроводнике, f pranc. mobilité intrinsèque, f … Radioelektronikos terminų žodynas
mobilité intrinsèque — savojo laidumo puslaidininkio krūvininkų judris statusas T sritis radioelektronika atitikmenys: angl. intrinsic mobility vok. Eigenbeweglichkeit, f rus. подвижность носителей в собственном полупроводнике, f pranc. mobilité intrinsèque, f … Radioelektronikos terminų žodynas
savojo laidumo puslaidininkio krūvininkų judris — statusas T sritis radioelektronika atitikmenys: angl. intrinsic mobility vok. Eigenbeweglichkeit, f rus. подвижность носителей в собственном полупроводнике, f pranc. mobilité intrinsèque, f … Radioelektronikos terminų žodynas
подвижность носителей в собственном полупроводнике — savojo laidumo puslaidininkio krūvininkų judris statusas T sritis radioelektronika atitikmenys: angl. intrinsic mobility vok. Eigenbeweglichkeit, f rus. подвижность носителей в собственном полупроводнике, f pranc. mobilité intrinsèque, f … Radioelektronikos terminų žodynas
Graphene — is a one atom thick planar sheet of sp2 bonded carbon atoms that are densely packed in a honeycomb crystal lattice. It can be viewed as an atomic scale chicken wire made of carbon atoms and their bonds. The name comes from GRAPHITE + ENE;… … Wikipedia
china — /chuy neuh/, n. 1. a translucent ceramic material, biscuit fired at a high temperature, its glaze fired at a low temperature. 2. any porcelain ware. 3. plates, cups, saucers, etc., collectively. 4. figurines made of porcelain or ceramic material … Universalium
China — /chuy neuh/, n. 1. People s Republic of, a country in E Asia. 1,221,591,778; 3,691,502 sq. mi. (9,560,990 sq. km). Cap.: Beijing. 2. Republic of. Also called Nationalist China. a republic consisting mainly of the island of Taiwan off the SE coast … Universalium
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
semiconductor — /sem ee keuhn duk teuhr, sem uy /, n. 1. a substance, as silicon or germanium, with electrical conductivity intermediate between that of an insulator and a conductor: a basic component of various kinds of electronic circuit element (semiconductor … Universalium
Copper indium gallium selenide solar cells — Copper indium gallium selenide (CuIn1 xGaxSe2 or CIGS) is a direct bandgap semiconductor useful for the manufacture of solar cells. Because the material strongly absorbs sunlight, a much thinner film is required than of other semiconductor… … Wikipedia